| PART |
Description |
Maker |
| KM68V1000BLE_LE-L KM68U1000BLE_LE-L KM68U1000BLG-1 |
CONNECTOR ACCESSORY 连接器附
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM 128K的8位低功耗和低电压的CMOS Statinc内存
(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS62WV5128ALL IS62WV5128BLL |
(IS62WV5128A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
(IS62WV51218A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
| BS616LV8017 BS616LV8017FIP70 BS616LV8017EC BS616LV |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Asynchronous 8M(512Kx16) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| BS62LV1027 BS62LV1027PIP70 BS62LV1027SCG70 BS62LV1 |
Asynchronous 1M(128Kx8) bits Static RAM
LM5035 PWM Controller with Integrated Half-Bridge and SyncFET Drivers; Package: TSSOP EXP PAD; No of Pins: 20
LM5041A Cascaded PWM Controller; Package: TSSOP; No of Pins: 16
LM5041 Cascaded PWM Controller; Package: TSSOP; No of Pins: 16
Very Low Power/Voltage CMOS SRAM 128K X 8 STANDARD SRAM, 55 ns, PDSO32
Very Low Power/Voltage CMOS SRAM 128K X 8 STANDARD SRAM, 55 ns, PDIP32
Very Low Power/Voltage CMOS SRAM 非常低功电压的CMOS的SRAM
LM5033 100V Push-Pull Voltage Mode PWM Controller; Package: LLP; No of Pins: 10 128K X 8 STANDARD SRAM, 70 ns, PDSO32
LM5030 100V Push-Pull Current Mode PWM Controller; Package: LLP; No of Pins: 10 128K X 8 STANDARD SRAM, 55 ns, PDIP32
LM5030 100V Push-Pull Current Mode PWM Controller; Package: LLP; No of Pins: 10 128K X 8 STANDARD SRAM, 70 ns, PDIP32
Very Low Power/Voltage CMOS SRAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32
Very Low Power/Voltage CMOS SRAM 128K X 8 STANDARD SRAM, 70 ns, UUC
|
http://
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
BRILLIANCE SEMICONDUCTOR INC
|
| ICL7611 ICL7611BCPA ICL7611DCBA ICL7611DCBA-T ICL7 |
Op Amp, CMOS, Rail-to-Rail I/O, Programmable Icc, 1.4MHz, Low Voltage 1-8Vdc, Low Bias 0.05nA
Op Amp, CMOS, Rail-to-Rail Output, 1.4MHz, Low Voltage 1-8Vdc, Programmable Icc, Low Bias 0.05nA
1.4MHz, Low Power CMOS Operational Amplifiers
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
|
Samsung Electronic
|
| ICL762101 ICL7621DCPA ICL7621 ICL7621BCPA ICL7621D |
Op Amp, CMOS, Rail-to-Rail Output, Low Voltage 1-8Vdc, Rin=10E12, Ibias=1pA, Dual
Dual, Low Power CMOS Operational Amplifiers
|
INTERSIL[Intersil Corporation]
|
| TMP04CH01FXXXJTMP04CH01XXXS |
CMOS 4 bit LL Microcontroller (LL: Low power consumption & Low voltage operation)
|
TOSHIBA
|
| EM680FV8A |
1M x 8 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| IS62WV25616ALL-70BI IS62WV25616ALL-70T IS62WV25616 |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
| K6T1008V2C K6T1008V2C-B K6T1008V2C-D K6T1008V2C-F |
128K x8 bit Low Power and Low Voltage CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
